I am working with CHO cell line (hERG transfected). My internal (KCl based) and external (NaCl based) solutions are very standard.
1: I achieve G-seal. But mostly <1G Ohms. Several 100 M Ohms.
2: I rupture the patch membrane to the whole cell configuration. The membrane resistance>a few G ohms.
Thus, once the patch membrane is ruptured, the resistance value gets increased. Is this normal behavior? (I imagine opposite?).